Главная Промышленная автоматика.

Functions, U.S. Dept. of Commerce, National Bureau of Standards Applied Mathematics Series, No. 55, p. 587, 1970. [8] Maycock, P.D., Solid State Electronics, 10:161, 1967. [9] Huang, H.C, F.N. Sechi, and L.S. Napoli, 6th Biennial Cornell Electrical Engineering Conference, Ithaca, 1977. [10] Dietzel, K.R., V.L. Hein, and V.D. Lenzi, TASJC (Thermal Analysis of Substrates and Integrated Circuits), unpublished BTL program. [11] Fukui, H., (unpubhshed work).

[12] Sechi, F.N., B.S. Perlman, and J.M. Cusack, MTT Symp. Digest, 1977, p. 143.

[13] Описанная здесь измерительная система бьша создана в лабораториях фирмы RCA для фирмы Sandia. См. Automatic Infrared Microscope Manual Report, N2, July, 1977.

[14] Macksey, M., R.L. Adams, E.N. McQuiddy, Jr., D.W. Shaw, and W.R. Wissman, IEEE Trans, on Electron Devices, ED-24: 113, 1977; M. Macksey, private communication.

[15] Stephens, CE., and F.N. Sinnadurai,/ Phys. E., 7:671, 1974.

[16] Например, диапазоны шшзотропных жидкостей следующие.

бутил П - (П-этоксифенокси-карбонил) - фенил карбонат 4-алкил~4 -бис (пенилокси) -азокси-бензол 4-алкил-4-дибутоксиазоксибензол П, П-анзоксидифенетол

Эти жидкие кристаллы разработаны фирмой Eastman Kodak. [17] Buchsbaum, R.J. (unpublished).

[18] Информация об измерительной технике получена от фирмы RCA.

[19] Carslow, H.S., and J.C. Jaeger, Conduction of Heat in Solids. Oxford: Oxford University Press, 1959.

к главе 12

[1] Christou, A., and K. Sieger, 6th Biennial Conf. on Active

Microwave Semiconductor Devices and Circuits, Cornell, 1977. [2] Sinha, A.K., and J.M. Poate, Appl Phys. Lett., 23:666, 1973. [3] Chino, K., and Y. Wada,i/)»7. / .4pp/>yb3/s., 16.1823, 1977.



[4] Irie, Т., I. Nagasako, A. Kohzu, and K. Sekido, JEEE Trans.

on Microwave Theory and Tech., MTT-24:321, 1976. [5] Lundgren, R., Final Technical Report, RADC-TR-78-213,

Oct. 1978.

[6] Drukier, I., and J.F. Silcox, 17th An. Proc. Reliab. Phys. Symp.,

San Francisco, p. 150, 1979. [7] Peck, D.S., and C.H. Zierdt, Jr., Proc. JEEE, 62:185, 1974. [8] Goldthwaite, L.R., Proc. 7th Natl. Symp. Reliab. Quality

Control, Phila., PA, p. 208, 1961. [9] Jordan, A.S., Microelectronics and Reliabiltty, 18:267, 1978. [10] Jordan, A.S., to be published.

[11] Jordan, A.S., J.C. Irvin, andW.O. Schlosser, 18th An. Proc.

Reliab. Phys. Symp., Las Vegas, p. 123, 1980. [12] Irvin, J.C, and A. Loya, Bell Syst. Tech. J., 57:2823, 1978. [13] Ireson, W.G., Reliability Handbook. New York: McGraw Hill,

1966.

[14] Kaplan, E.L., and P. Meier, Jowr. of the Am. Statis. Assoc , 53:457, 1958.

[15] Herd, G.R., Proc. 6th Natl. Symp. on Reliab. and Qual. Control, p. 217, 1960.

[16] Fukui, H., S.H. Wemple, J.C. Irvin, W.C. Niehaus, J.C.M.

Hwang, H.M. Cox, W.O. Schlosser, and J.V. DiLorenzo, 18th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 151, 1980.

[17] Irvin, J.C, (unpublished work).

[18] Wright, J., and E.B. Hakim, llth An. Proc. Reliab. Phys. Symp., Las Vegas, p. 224, 1973.

[19] Shumka, A., and R.R. Piety, 13th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 93, 1975.

[20] Anderson, W.T., A. Christou, and K.J. Sieger, 17th An. Proc. Reliab. Phys. Symp., San Francisco, p. 127, 1979.

[21] Abbott, D.A., and J.A. Turner in Gallium Arsenide and Related Compounds (Edinburgh) 1976 (Inst. Phys. Conf. Ser. no. 33a) p. 255. London. Adam Helger/The Institute of Physics, 1977.

[22] Abbott, D.A., and J.A. Turner, IEEE Trans, on Microwave

Theory Tech., MTT-24:321, 1976. [23] Huang, C, F. Kwan, S.Y. Wang, P. Galle, and J.S. Barrera,

17th An. Proc. Reliab. Phys. Symp., San Francisco, p. 143,

1979.



[24] Omori, М., J. Wholey, and J.F. Gibbons, 18th An. Proc. Reliab. Phys. Symp., Las Vegas, p. 134. 1980.

[25] Madzy, T.M., IEEE Trans. Electron. Devices, ED-23:1099, 1976.

[26] Sbar, N.L., and R.P. Kozakiewicz, 16th An. Proc. Reliab.

Phys. Symp., Las Vegas, p. 161, 1978. [27] Mukherjee, S.D., D.V. Morgan, M.J. Howes, J.G. Smith, and

P. Brook,/ Vac. Sci. and TechnoL. 16:138, 1979. [28] Cohen, E.D., and A.C MacPherson, 17th An. Proc. Reliab.

Phys. Symp., San Francisco, p. 156, 1979. [29] Morizane, K., M. Dosen, and Y. Mose in Gallium Arsenide

and Related Compounds (St. Louis) 1978 (Inst. Phys. Conf.

Ser. no. 45) p. 287. London: Adam Helger/The Institute of

Physics, 1979.

[30] Wemple, S.H., et al., IEEE Trans. Electron. Devices, ED-28:834, [31] Asai, S:, S. Ishioka, H. Kurono, S. Takahashi, and H. Kodera,

Supplement to Jour, of Jap. Soc. of AppL Phys., 42:71, 1973. [32] Alderstein, M.G., Electron Lett., 12:297, 1976. [33] Meignant, D., D. Boccon-Gibod, and J.M. Bourgeois, Electron

Lett., 15:779, 1979. [34] Lang, D.V., / AppL Phys., 45:3023, 1974. [35] Chen, F., and J.C. Irvin, (unpublished work). [36] Kimerling, L.C, IEEE Trans. NucL Sci, NS-23:1497, 1976. [37] Ballamy, W.C, and L.C. Kimerling, IEEE Trans. Electron.

Devices, ED-25:746, 1978. [38] Sieger, K., and A. Christou, Solid-State Electron., 21:677,

1978.

[39] Fukui, H., private communication.

[40] White, P.M., B.L. Hewitt, and J.A. Turner, Proc. 8th European

Microwave Conference, Paris, p. 405, 1978. [41] Mizuishi, K., H. Kurono, H. Sato, and H. Kodera, IEEE Trans.

Electron. Devices, ED-26:1008, 1979.

к главе 13

[1] Mead, CA., Proc. IEEE, 54: 307, 1966.

[2] Hooper, W.W. and W.I. Lehrer, Proc. IEEE, 55:1237, 1967.

[3] Wolf, ?.,IBMJ. Res. Develop., 14:125, 1970.

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